Micron and Intel announced a new NAND device built on a 25nm process — the smallest, most advanced semiconductor process technology ever put into production.
Scaling to 25 nm — a feat many thought was nearly impossible — illustrates continued their leadership in NAND technology and offers promising possibilities for tomorrow’s storage applications. With this new process, we’re able to put 8 GB of storage on a single NAND die, providing a solution that can increase storage capacity and keep power use low, all without expanding your design’s footprint.
Sampling 64Gb, 25 nm MLC device now, and expect to enter mass production in the second quarter of 2010.

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